AlN Single Crystal Substrate(Aluminium Nitride wafer)

AlN single crystal substrate(Aluminium Nitride wafer)

Manufacturer information


CrystAl-N was founded in 2010 as a spin-off from the Materials Science Department 6 of Friedrich-Alexander-University Erlangen-Nuremberg (Germany) with more than 10 years of expertise in the growth of bulk AlN crystals. The Company is led by the renowned crystal growth expert Dr. Boris Epelbaum and Dr. Paul Heimann. CrystAl-N is advised by senior scientist Prof. Albrecht Winnacker and serial entrepreneur Horst Linn who previously founded SiCrystal AG, today's second-biggest supplier of silicon carbide substrates. The company moved from Erlangen to Fürth into larger facilities in 2011. In the following year an establishment of sales representations and offices in China, Taiwan, Japan and Korea took place. In 2013, the CrystAl-N product portfolio was enlarged by offering ultrapure aluminum nitride powder and tungsten and molybdenum parts.
CrystAl-N AlN

Available in research and production qualities

• epi-ready surfaces (Al-polar or N-polar)
• 1 and 2 inches in diameter
• 300 μm thick wafers up to 50 % transmission down to 230 nm wavelength
• orientation (0001) standard, semi-polar and non-polar on request
• dislocation density < 105 cm-
We are prepared to collaborate for a close collaboration and offer the additional service of supporting the whole epitaxy process by reclaiming or replacing wafers with different specifications.
CrystAl-N AlN

UV transparency

• low absorption coefficient up to the band edge
CrystAl-N AlN

Polished surface c-plane (0001)

Applications - AlN-based electronic devices and AlN growth technology


Focussing Applications

Totally new products and markets will emerge by using AlN substrates in electronic devices. For the first time, high-performance UV LEDs are manufacturable, which will enable various applications, such as point-of-use water and media disinfection, air purification in air conditioners of planes and cars and many more… AlN-based power conversion devices benefit significantly from the unique properties of AlN as well.  

Applications for Ultra-Violet Light Emitting Devices (UV LEDs)



As many regions in the world are suffering from a lack of clean water, there is an unavoidable necessity for suitable point of use sterilization systems. According to the World Health Organization, every hour more than 100 children die from water-borne bacteria. Only aluminum nitride based UV-C LEDs are capable of killing these bacteria via radiotherapy. Thereby no toxic waste accumulates as it does in mercury-based ultraviolet lamps. This is only possible because of the small and efficient AlN based UV-C LEDs.

UV-C LEDs can furthermore be used in bathhouses as substitute for chlorine, in municipal waste water and sewage treatment, fish hatcheries and in recreational water treatment in hotels, ships and campgrounds.

Various sectors benefit from AlN-based UV LEDs

health industry
Health industry

• air disinfection
• tools and media purification
• hand disinfection
• cancer treatment and skin therapy
• DNA sequencing
• protein analysis
• bio-agent detection etc.
Air conditioning

Air conditioning

• Air purification in cars, airplanes or hotels


• Enables high-brightness LEDs for solid-state-lighting of facades of buildings and rooms and pure white LEDs of any spectral color


• Curing of varnishes, printing inks and polymers
Security and Engineering


• UV sensors to identify documents, currency, biological toxins, solar -blind detectors, short-range covert communication

• Spectroscopy to analyze chemical compositions

Application for power conversion devices

Application for power conversion devices

Converting electricity from one voltage to another, applications for power conversion devices are part of everybody's life, like power adapters, solar cell plants or PCs.

Beyond this, hybrid vehicles and electric cars strongly benefit from the improvements which are possible using AlN-based power conversion devices. The resistance of AlN is much lower than the one of competing materials such as silicon carbide or gallium nitride and the breakdown voltage is much higher. AlN-based Schottky Diodes should have a 10 to 15 times higher power handling capacity.

AlN growth technology

AlN growth technology

Bulk AlN crystals are most successfully grown by a sublimation-recondensation process (PVT growth) at temperatures exceeding 2000°C. A set-up based on tungsten parts is most stable against the aggressive vapor and provides very low contamination of the growing crystal, which results in UV-transparent wafers.

Large-area AlN single crystals are obtained by seeding on silicon carbide (SiC) substrates and continuously regrowing on pure aluminum nitride wafers. Thus it is possible to follow the SiC seed size in the resulting AlN crystals. CrystAl-N's patented growth technology can follow the size of any SiC seed with roughly one inch less in diameter, which leads to a unique competitive advantage: 
UV-transparent wafers in large diameters with high upscaling potential. 
Fabricated AlN wafers resulting from this growth process are well-defined in orientation and of the highest UV-transparency available on the market, which is inevitable to produce UV LEDs.
AlN material properties

Material properties
Crystal structure: Wurtzite P63mc
Lattice constants: a = 3.112 Å; c = 4.982 Å
Density: 3.23 g/cm3
Thermal conductivity: 285 W/mK
Acoustic wave velocity*:         11300 m/s
Band gap: 6.0 eV (direct)
Dielectric constant: 8.5
Piezoelectric constant*: 1.56 C/m2
* measured along (0001) direction (v33 or e33)

AlN does not melt but rather dissociates at approx. 2400°C: Crystal growth from the gas phase!

Crystal growth from the gas phase reactor
Crystal growth from the gas phase temperature

Spec Sheet