Ascatron offers total solutions for SiC power device development.From the design stage of SiC device planning, to prototyping, evaluation, pilot production and large-scale mass production, Ascatron furnishes customers with optimum solutions for each stage.At the KTH Royal Institute of Electronics, Sweden, Ascatron has a 1300 m2 clean room, where they make Epi up to 150 mm wafers, and device prototypes.
Beginning with the announcement of the 4.5 KV PiN-Diode in 1999, there has been a profusion of developmental results, especially in high voltage power devices, developed and prototyped according to our customer's design, such as SiC diode with embedded p-region, SiC-IGBT, SiC-SJ type MOSFET etc.Ascatron also undertakes manufacturing with specific processes such as embedded epi, trench layer formation, heat treatment, SJ structure formation etc.
Ascatron (Sweden) is an SiC-specified foundry founded in 2011 able to process SiC from epitaxy to device design and packaging.
A spin-off venture from Swedish national research institute ACREO, Ascatron is still located at the same research institution and conducts R&D for SiC since 1993. Due to unique expertise based on development results, Ascatron provides 3D SiC epitaxial structure, device design, process technology etc. as well as know-how and technology only available from their company.