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HERA-DLTS System Specifications

Hardware (Bias / Pulse Voltage)

  • Voltage Range: -/+ 24V (option +/- 100V)
  • Voltage Resolution: 0.3 mV (1.5mV with 100V option)
  • Shortest Pulse Width :1 µs
    An external pulse generator (optional) is used: 20 ns (+/- 10V)
  • Longest Pulse Width : > 1000 s
    Optical (Laser) pulse using a TTL modulation input trigger can also be used.
  • Computer controlled automatic gain setting of signal amplifier : 1 – 1028
  • Anti-aliasing filter: Bessel(8th)
  • Digital Transient Recorder
    Max Sampling Number / Transient: 64000
    Min Sampling Interval : 2 µ s
    Max Sampling Interval: 4 s
  • Capacitance Meter: Boonton 7200
    Built in automatic compensation mechanism of reverse bias capacitance and automatic range switching mechanism
    Capacitance Compensation : 1 pF - 3300 pF
    Measurement Frequency : 1 MHz
    Measurement Signal Voltage : 15mV, 30mV, 50mV, 100mV
    Capacitance Ranges : 2 pF - 2000 pF (4)
    Able to do Conductance Measurement
  • Current amplifier with automatic range setting
    Max Measurement Current : 15 mA
    Current Resolution : 10 pA
    This current amplifier is used for I/V measurement and current transient measurement (I-DLTS).
    Automatic switching of capacitance DLTS / current DLTS mode
  • Most commercial cryostats can be supported.


  • C-DLTS (Capacitance DLTS; Standard Mode)
  • CC-DLTS (Constant Capacitance DLTS; option)
  • I-DLTS (Current DLTS)
  • Q-DLTS (Charge DLTS)
  • FET DLTS (3 terminal DLTS; 2nd power supply as standard equipment)
  • DD-DLTS (Double Correlation DLTS)
  • ICTS (Isothermal Capacitance Transient (C or I) Spectroscopy)
  • PICS (Photo-induced transient (C or I) spectroscopy)
  • Capture DLTS (Capture Measurement)
  • Fourier-DLTS (Fourier Transform DLTS)
  • Laplace-DLTS (Laplace Transform DLTS)
  • MIS - Nss DLTS (Interface State Measurement/Analysis)
  • MIS - Zerbst DLTS (Zerbst Analysis)
  • C(V), I(V), C(t), I(t)

Evaluation Mode

(1)Evaluation Mode

  • Using 23 different correlators, the data from 28 Arrhenius plot points, which is equivalent to 23 temperature scans in traditional DLTS, can be obtained with a single temperature scan measurement.
  • Also, measurement of 18 different parameter sets (bias voltage, pulse voltage / width / mode etc.) can be performed by a single temperature measurement scan.

(2)Fourier Transform Evaluation Analysis

  • Direct evaluation of τ (time constant) from transient waveform

(3)Laplace Transform Evaluation Analysis

  • Separation and extraction of similar τ from transient waveform by inverse Laplace transform (corresponding to C, CC, I, Q mode)


  • DLTS by a new mathematical algorithm, and deconvolution of ICTS spectrum (separation and extraction of proximity levels)


(1)C/V, I/V, C(t) Measurement

  • Shallow level concentration evaluation
  • Energy barrier height evaluation
  • Ideal (n-) factor evaluation (Schottky diode)
  • Insulating film layer capacity evaluation (MIS capacitor)
  • Zerbst analysis (MIS)
  • Transient analysis
  • Fourier transform, Laplace transform, Multi-exponential fit (separation and extraction of multiple emission processes)
  • FET analysis, parameterized I/V curve, 3D plot


  • Equipped with parameter set for routine measurement
  • User definition for measurement parameter set can be created and saved
  • User definition for measurement parameter set can be created and saved
  • Eight different measurement tasks can be set in single temperature scan
  • Arrhenius plot evaluation by automatic and manual methods
  • Fourier transform, Laplace transform, deconvolution analysis by multi-exponential fit
  • Separation and extraction of proximity levels by deconvolution in correlation function method DLTS analysis (maximum analysis)
  • Simultaneous I / V and C / V measurement possible during DLTS measurement
  • Trap concentration measurement
  • C(T) measurement possible during DLTS measurement
  • 23 different correlation functions in Arrhenius plot evaluation analysis
  • One temperature scan is sufficient to generate an Arrhenius plot
  • New correcting method for temperature dependence in trap concentration evaluation (use of CR(T), CP(T) or C / V(T) data acquired prior to DLTS)


  • Trap concentration evaluation
  • capture cross-section measurement
  • 3-D ICTS measurement
    Tw: In addition to period width, it is possible to measure a transient while automatically changing another parameter (temperature, pulse width ... etc.)
  • Arrhenius plot evaluation analysis from 3-D ICTS measurement (including waveform separation operation)
  • Measurement of logarithmic time transient
  • Temperature dependence evaluation of capture cross-section (fast pulse option)
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