Ceramic Forum, Glass Manufacturing Technology and Wide-Gap Semiconductors

Hardware (Bias / Pulse Voltage)

• Voltage Range: -/+ 24V (option +/- 100V)
• Voltage Resolution: 0.3 mV (1.5mV with 100V option)
• Shortest Pulse Width :1 µs
  An external pulse generator (optional) is used: 20 ns (+/- 10V)
• Longest Pulse Width : > 1000 s
  Optical (Laser) pulse using a TTL modulation input trigger can also be used.
• Computer controlled automatic gain setting of signal amplifier : 1 – 1028
• Anti-aliasing filter: Bessel(8th)
• Digital Transient Recorder
  Max Sampling Number / Transient: 64000
  Min Sampling Interval : 2 µ s
  Max Sampling Interval: 4 s
• Capacitance Meter： Boonton 7200
  Built in automatic compensation mechanism of reverse bias capacitance and automatic range switching mechanism
  Capacitance Compensation : 1 pF - 3300 pF
  Measurement Frequency : 1 MHz
  Measurement Signal Voltage : 15mV, 30mV, 50mV, 100mV
  Capacitance Ranges : 2 pF - 2000 pF (4)
  Able to do Conductance Measurement
• Current amplifier with automatic range setting
  Max Measurement Current : 15 mA
  Current Resolution : 10 pA
  This current amplifier is used for I/V measurement and current transient measurement (I-DLTS).
  Automatic switching of capacitance DLTS / current DLTS mode
• Most commercial cryostats can be supported.

DLTS Mode

• C-DLTS (Capacitance DLTS; Standard Mode)
• CC-DLTS (Constant Capacitance DLTS; option)
• I-DLTS (Current DLTS)
• Q-DLTS (Charge DLTS)
• FET DLTS (3 terminal DLTS; 2nd power supply as standard equipment)
• DD-DLTS (Double Correlation DLTS)
• ICTS (Isothermal Capacitance Transient (C or I) Spectroscopy)
• PICS (Photo-induced transient (C or I) spectroscopy)
• Capture DLTS (Capture Measurement)
• Fourier-DLTS (Fourier Transform DLTS)
• Laplace-DLTS (Laplace Transform DLTS)
• MIS - Nss DLTS (Interface State Measurement/Analysis)
• MIS - Zerbst DLTS (Zerbst Analysis)
• C(V), I(V), C(t), I(t)

Evaluation Mode

（1）Evaluation Mode

• Using 23 different correlators, the data from 28 Arrhenius plot points, which is equivalent to 23 temperature scans in traditional DLTS, can be obtained with a single temperature scan measurement.
• Also, measurement of 18 different parameter sets (bias voltage, pulse voltage / width / mode etc.) can be performed by a single temperature measurement scan.

（2）Fourier Transform Evaluation Analysis

• Direct evaluation of τ (time constant) from transient waveform

（3）Laplace Transform Evaluation Analysis

• Separation and extraction of similar τ from transient waveform by inverse Laplace transform (corresponding to C, CC, I, Q mode)

（4）HERA-DLTS

• DLTS by a new mathematical algorithm, and deconvolution of ICTS spectrum (separation and extraction of proximity levels)

Software

（1）C/V, I/V, C(t) Measurement

• Shallow level concentration evaluation
• Energy barrier height evaluation
• Ideal (n-) factor evaluation (Schottky diode)
• Insulating film layer capacity evaluation (MIS capacitor)
• Zerbst analysis (MIS)
• Transient analysis
• Fourier transform, Laplace transform, Multi-exponential fit (separation and extraction of multiple emission processes)
• FET analysis, parameterized I/V curve, 3D plot

（2）DLTS（“Tempscan”）

• Equipped with parameter set for routine measurement
• User definition for measurement parameter set can be created and saved
• User definition for measurement parameter set can be created and saved
• Eight different measurement tasks can be set in single temperature scan
• Arrhenius plot evaluation by automatic and manual methods
• Fourier transform, Laplace transform, deconvolution analysis by multi-exponential fit
• Separation and extraction of proximity levels by deconvolution in correlation function method DLTS analysis (maximum analysis)
• Simultaneous I / V and C / V measurement possible during DLTS measurement
• Trap concentration measurement
• C(T) measurement possible during DLTS measurement
• 23 different correlation functions in Arrhenius plot evaluation analysis
• One temperature scan is sufficient to generate an Arrhenius plot
• New correcting method for temperature dependence in trap concentration evaluation (use of CR(T), CP(T) or C / V(T) data acquired prior to DLTS)

（3）ICTS

• Trap concentration evaluation
• capture cross-section measurement
• 3-D ICTS measurement
  Tw: In addition to period width, it is possible to measure a transient while automatically changing another parameter (temperature, pulse width ... etc.)
• Arrhenius plot evaluation analysis from 3-D ICTS measurement (including waveform separation operation)
• Measurement of logarithmic time transient
• Temperature dependence evaluation of capture cross-section (fast pulse option)

• DLTS Method
• Phystech DLTS Measuring Device (FT1030)
• HERA-DLTS System Specifications
• Evaluation and Analysis Services
• Detailed explanation of DLTS method